Data transmission circuit

ABSTRACT

A data transmission circuit may include a first driving block configured to drive an output terminal for a first time in response to a data driving signal and a level of the output terminal, and a second driving block configured to drive the output terminal for a second time after the first time, in response to the data driving signal.

CROSS-REFERENCES TO RELATED APPLICATION

The present application is a continuation application of U.S applicationSer. No. 14/242,441, filed on Apr. 1, 2014, and claims priority under 35U.S.C. §119(a) to Korean application number 10-2013-0166991, filed onDec. 30, 2013, in the Korean Intellectual Property Office, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

Various embodiments generally relate to a semiconductor circuit, andmore particularly, to a data transmission circuit.

BACKGROUND

A conventional data transmission circuit includes a transmitter.

The transmitter may be electrically coupled with a receiver through atransmission line.

The transmitter may include a transistor wherein the leakage currentcharacteristic of a transistor is likely to be degraded or a variationin VT (voltage or temperature) is likely to occur.

Therefore, when continuously outputting high level data, a problem maybe caused in that the level of an output voltage continuously rises.

If the level of the output voltage continuously rises, reliability islikely to be degraded when subsequently outputting low level data.

SUMMARY

In an embodiment, a data transmission circuit may include: a firstdriving block configured to drive an output terminal for a first time inresponse to a data driving signal and a level of the output terminal;and a second driving block configured to drive the output terminal for asecond time after the first time, in response to the data drivingsignal.

In an embodiment, a data transmission circuit may include: a drivingblock configured to drive an output terminal in response to a datadriving signal; and a compensation block configured to control a currentleakage amount of the output terminal in response to the data drivingsignal and a result of detecting a level of the output terminal, andthereby offset an increment in the level of the output terminal.

In an embodiment, a data transmission circuit may include: a transmitterconfigured to drive an output terminal for a first time by using firsttype logic elements, interrupt an driving which is proceeded by thefirst type logic elements, and drive the output terminal for a secondtime after the first time by using second type logic elements which aredesigned to have different threshold voltages from the first type logicelements; and a receiver electrically coupled with the transmitterthrough a transmission line.

In an embodiment, a data transmission circuit may include: a transmitterconfigured to control a current leakage amount of an output terminal inresponse to a result of detecting a level of the output terminal, andthereby offset an increment in the level of the output terminal; and areceiver electrically coupled with the transmitter through atransmission line.

In an embodiment, a system may include: a processor; a chipsetconfigured to couple with the processor; a memory controller configuredto receive data provided from the processor through the chipset; and amemory device configured to receive the data, the memory deviceincluding: a transmitter configured to control a current leakage amountof an output terminal in response to a result of detecting a level ofthe output terminal, and thereby offset an increment in the level of theoutput terminal, wherein the memory controller comprises a receiverelectrically coupled with the transmitter through a transmission line.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 7 are examples of circuit diagrams of data transmissioncircuits in accordance the embodiments; and

FIG. 8 is a waveform diagram of an output voltage according to theembodiments.

FIG. 9 illustrates a block diagram of a system employing the datatransmission circuit in accordance with the embodiments discussed abovewith relation to FIGS. 1-8.

DETAILED DESCRIPTION

Hereinafter, examples of data transmission circuits according to variousembodiments will be described below with reference to the accompanyingdrawings.

The data transmission circuit according to the various embodiments maybe capable of stably retaining the level of an output voltage. Thus,since the level of an output voltage may be stably retained, thereliability of transmission data may be improved.

As shown in FIG. 1, a data transmission circuit 100 in accordance withan embodiment which includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU (centralprocessing unit) and a GPU (graphic processing unit), which instructsthe semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a first driving block 200 and a seconddriving block 300.

The first driving block 200 may be configured to drive an outputterminal DQ for a first time in response to data driving signals PU andPD and the level of the output terminal DQ.

The second driving block 300 may be configured to drive the outputterminal DQ for a second time after the first time, in response to thedata driving signal PU.

The first driving block 200 and the second driving block 300 may beconstituted by different types of logic elements. The logic elements mayinclude a transistor and an inverter.

The first driving block 200 may be constituted by first type logicelements, and the second driving block 300 may be constituted by secondtype logic elements.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

The first driving block 200 may include a driver 700 and a drivingcontrol unit 800.

The driver 700 may be configured to drive the output terminal DQ inresponse to the data driving signals PU and PD.

The driver 700 may include a plurality of transistors 210 and 220 and aninverter 230.

The driving control unit 800 may be configured to open the current pathof the driver 700 for the first time in response to the level of theoutput terminal DQ.

The driving control unit 800 may include a transistor 240 and aninverter 250.

The transistors 240 and 210 are electrically coupled between a powersupply terminal VDDQ and the output terminal DQ.

The transistor 220 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 210 and 220.

The data driving signal PU and the data driving signal PD may begenerated according to high level data and low level data, respectively.

The inverter 230 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 220.

The inverter 250 applies a control signal DQD which is generated bydelaying and inverting the level of the output terminal DQ, to the gateof the transistor 240.

The second driving block 300 may include a transistor 310 which iselectrically coupled between the power supply terminal VDDQ and theoutput terminal DQ.

The data driving signal PU is applied to the gate of the transistor 310.

Operations of the data transmission circuit 100 in accordance with anembodiment, configured as mentioned above, will be described below.

In an initial operation, since the output terminal DQ has a low level,the inverter 250 of the first driving block 200 generates the controlsignal DQD of a high level by delaying and inverting the level of theoutput terminal DQ.

According to the control signal DQD of the high level, the transistor240 opens the current path between the power supply terminal VDDQ andthe transistor 210.

The transistor 210 raises the output terminal DQ to a high level inresponse to the data driving signal PU.

As the level of the output terminal DQ rises and becomes equal to orhigher than the threshold voltage of the inverter 250, the inverter 250transitions the control signal DQD to a low level.

According to the control signal DQD of the low level, the transistor 240blocks the current path between the power supply terminal VDDQ and thetransistor 210.

Therefore, the first driving block 200 drives the output terminal DQ foronly the first time.

As described above, the transistor 310 of the second driving block 300has a threshold voltage higher than the logic elements of the firstdriving block 200.

Accordingly, the transistor 310 of the second driving block 300 drivesthe output terminal DQ for the second time in response to the datadriving signal PU, at a timing later than the transistor 210 of thefirst driving block 200, that is, after ending of the first time.

The second time may be a time from after ending of the first time tountil the level of the data driving signal PU falls to be lower than thethreshold voltage thereof.

In the data transmission circuit 100 in accordance with an embodiment,after quick driving of the output terminal DQ is performed for the firsttime by using the first driving block 200 which has a relatively fastresponding speed but has a relatively poor leakage currentcharacteristic, the output terminal DQ is retained at the high level forthe second time by using the second driving block 300 which has arelatively slow responding speed but has a relatively excellent leakagecurrent characteristic. As a consequence, it is possible to secure afast driving speed and improve a leakage current characteristic.

As shown in FIG. 2, a data transmission circuit 101 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a first driving block 201 and a seconddriving block 301.

In the data transmission circuit 101 in accordance with an embodiment,when compared to FIG. 1, it is exemplified that the first driving block201 is constituted by a second type logic element and the second drivingblock 301 is constituted by a first type logic element.

Therefore, the second driving block 301 may be configured to first drivean output terminal DQ for a first time, and the first driving block 201may be configured to drive the output terminal DQ for a second timeafter the first time.

The first driving block 201 may be configured to drive the outputterminal DQ for the second time in response to data driving signals PUand PD.

The second driving block 301 may be configured to drive the outputterminal DQ for the first time before the second time in response to thedata driving signal PU and the level of the output terminal DQ.

The first driving block 201 may include a plurality of transistors 211and 221 and an inverter 231.

The second driving block 301 may include a driver 701 and a drivingcontrol unit 801.

The driver 701 may be configured to drive the output terminal DQ inresponse to the data driving signal PU.

The driver 701 may include a transistor 311.

The driving control unit 801 may be configured to open the current pathof the driver 701 for the first time in response to the level of theoutput terminal DQ.

The driving control unit 801 may include a transistor 321 and aninverter 331.

The transistor 211 is electrically coupled between a power supplyterminal VDDQ and the output terminal DQ.

The transistor 221 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 211 and 221.

The inverter 231 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 221.

The transistors 321 and 311 are electrically coupled between the powersupply terminal VDDQ and the output terminal DQ.

The data driving signal PU is applied to the gate of the transistor 311.

The inverter 331 applies a control signal DQD which is generated bydelaying and inverting the level of the output terminal DQ, to the gateof the transistor 321.

Operations of the data transmission circuit 101 in accordance with anembodiment, configured as mentioned above, will be described below.

In an initial operation, since the output terminal DQ has a low level,the inverter 331 of the second driving block 301 generates the controlsignal DQD of a high level by delaying and inverting the level of theoutput terminal DQ.

According to the control signal DQD of the high level, the transistor321 opens the current path between the power supply terminal VDDQ andthe transistor 311.

The transistor 311 raises the output terminal DQ to a high level inresponse to the data driving signal PU.

As the level of the output terminal DQ rises and becomes equal to orhigher than the threshold voltage of the inverter 331, the inverter 331transitions the control signal DQD to a low level.

According to the control signal DQD of the low level, the transistor 321blocks the current path between the power supply terminal VDDQ and thetransistor 311.

Therefore, the second driving block 301 drives the output terminal DQfor only the first time.

As described above, the transistor 211, as the second type logicelement, of the first driving block 201 has a threshold voltage higherthan the first type logic elements of the second driving block 301.

Accordingly, the transistor 211 of the first driving block 201 drivesthe output terminal DQ for the second time in response to the datadriving signal PU, at a timing later than the transistor 311 of thesecond driving block 301, that is, after ending of the first time.

The second time may be a time from after ending of the first time tountil the level of the data driving signal PU falls to be lower than thethreshold voltage thereof.

In the data transmission circuit 101 in accordance with an embodiment,after quick driving of the output terminal DQ is performed for the firsttime by using the second driving block 301 which has a relatively fastresponding speed but has a relatively poor leakage currentcharacteristic, the output terminal DQ is retained at the high level forthe second time by using the first driving block 201 which has arelatively slow responding speed but has a relatively excellent leakagecurrent characteristic. As a consequence, it is possible to secure afast driving speed and improve a leakage current characteristic.

As shown in FIG. 3, a data transmission circuit 102 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a first driving block 202 and a seconddriving block 302.

The first driving block 202 may be configured to drive an outputterminal DQ for a first time in response to data driving signals PU andPD and the level of the output terminal DQ, and be controlled in itsdriving force in response to a plurality of test signals TM1 and TM2.

The second driving block 302 may be configured to drive the outputterminal DQ for a second time after the first time, in response to thedata driving signal PU.

The first driving block 202 and the second driving block 302 may beconstituted by different types of logic elements. The logic elements mayinclude a transistor and an inverter.

The first driving block 202 may be constituted by first type logicelements, and the second driving block 302 may be constituted by secondtype logic elements.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

The first driving block 202 may include a driver 702 and a drivingcontrol unit 802.

The driver 702 may be configured to drive the output terminal DQ inresponse to the data driving signals PU and PD.

The driver 702 may include a plurality of transistors 212 and 222 and aninverter 232.

The driving control unit 802 may be configured to open the current pathof the driver 702 for the first time in response to the level of theoutput terminal DQ.

The driving control unit 802 may control the amount of current suppliedthrough the current path of the driver 702, in response to the pluralityof test signals TM1 and TM2.

The driving control unit 802 may include a plurality of transistors 242and 262 and a plurality of inverters 252 and 272.

The current driving forces of the plurality of transistors 242 and 262may be different.

The transistors 242 and 262 are electrically coupled in parallel to apower supply terminal VDDQ.

The transistor 212 is electrically coupled between the transistors 242and 262 and the output terminal DQ.

The transistor 222 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 212 and 222.

The data driving signal PU and the data driving signal PD may begenerated according to high level data and low level data, respectively.

The inverter 232 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 222.

The inverter 252 applies a first control signal DQDO which is generatedby delaying and inverting the level of the output terminal DQ, to thegate of the transistor 242.

The inverter 272 applies a second control signal DQD1 which is generatedby delaying and inverting the level of the output terminal DQ, to thegate of the transistor 262.

The second driving block 302 includes a transistor 312 which iselectrically coupled between the power supply terminal VDDQ and theoutput terminal DQ.

The data driving signal PU is applied to the gate of the transistor 312.

Operations of the data transmission circuit 102 in accordance with anembodiment, configured as mentioned above, will be described below.

First, any one or both of the inverters 252 and 272 are activated usingthe plurality of test signals TM1 and TM2.

As described above, the current driving forces of the transistors 242and 262 may be different. Namely, the current driving force of any oneof the two transistors 242 and 262 may be relatively larger than theother of the two transistors 242 and 262.

Therefore, the amount of current supplied to the current path of thedriver 702 may be controlled by activating any one or both of theinverters 252 and 272 by using the plurality of test signals TM1 andTM2, and accordingly, the driving force of the first driving block 202may be controlled.

For example, it is assumed that the test signal TM1 is activated amongthe plurality of test signals TM1 and TM2.

In an initial operation, since the output terminal DQ has a low level,the inverter 252 of the first driving block 202 generates the firstcontrol signal DQDO of a high level by delaying and inverting the levelof the output terminal DQ.

According to the first control signal DQDO of the high level, thetransistor 242 opens the current path between the power supply terminalVDDQ and the transistor 212.

The transistor 212 raises the output terminal DQ to a high level inresponse to the data driving signal PU.

As the level of the output terminal DQ rises and becomes equal to orhigher than the threshold voltage of the inverter 252, the inverter 252transitions the first control signal DQDO to a low level.

According to the first control signal DQDO of the low level, thetransistor 242 blocks the current path between the power supply terminalVDDQ and the transistor 212.

Therefore, the first driving block 202 drives the output terminal DQ foronly the first time.

As described above, the transistor 312 of the second driving block 302has a threshold voltage higher than the logic elements of the firstdriving block 202.

Accordingly, the transistor 312 of the second driving block 302 drivesthe output terminal DQ for the second time in response to the datadriving signal PU, at a timing later than the transistor 212 of thefirst driving block 202, that is, after ending of the first time.

The second time may be a time from after ending of the first time tountil the level of the data driving signal PU falls to be lower than thethreshold voltage thereof.

In the data transmission circuit 102 in accordance with an embodiment,after quick driving of the output terminal DQ is performed for the firsttime by using the first driving block 202 which has a relatively fastresponding speed but has a relatively poor leakage currentcharacteristic, the output terminal DQ is retained at the high level forthe second time by using the second driving block 302 which has arelatively slow responding speed but has a relatively excellent leakagecurrent characteristic. As a consequence, it is possible to secure afast driving speed and improve a leakage current characteristic.

Also, by controlling the current amount of the current path, it ispossible to control the driving force of the first driving block 202.

As shown in FIG. 4, a data transmission circuit 103 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a first driving block 203 and a seconddriving block 303.

The first driving block 203 may be configured to drive an outputterminal DQ for a first time in response to data driving signals PU andPD and the level of the output terminal DQ, and control the length ofthe first time in response to a test signal TM.

The second driving block 303 may be configured to drive the outputterminal DQ for a second time after the first time, in response to thedata driving signal PU.

The first driving block 203 and the second driving block 303 may beconstituted by different types of logic elements. The logic elements mayinclude a transistor and an inverter.

The first driving block 203 may be constituted by first type logicelements, and the second driving block 303 may be constituted by secondtype logic elements.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

The first driving block 203 may include a driver 703 and a drivingcontrol unit 803.

The driver 703 may be configured to drive the output terminal DQ inresponse to the data driving signals PU and PD.

The driver 703 may include a plurality of transistors 213 and 223 and aninverter 233.

The driving control unit 803 may be configured to open the current pathof the driver 703 for the first time in response to the level of theoutput terminal DQ.

The driving control unit 803 may be configured to control the length ofthe first time in response to the test signal TM.

The driving control unit 803 may include a transistor 243, a multiplexer253, and a plurality of delays 263 and 273.

The plurality of delays 263 and 273 may be configured to delay andinvert the level of the output terminal DQ by different times andgenerate first and second control signals DQDO and DQD1.

The plurality of delays 263 and 273 may be constituted by differentnumbers of inverters.

The multiplexer 253 may be configured to select one of the first andsecond control signals DQDO and DQD1 in response to the test signal TM,and apply the selected control signal to the gate of the transistor 243.

The transistors 243 and 213 are electrically coupled between a powersupply terminal VDDQ and the output terminal DQ.

The transistor 223 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 213 and 223.

The data driving signal PU and the data driving signal PD may begenerated according to high level data and low level data, respectively.

The inverter 233 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 223.

The second driving block 303 includes a transistor 313 which iselectrically coupled between the power supply terminal VDDQ and theoutput terminal DQ.

The data driving signal PU is applied to the gate of the transistor 313.

Operations of the data transmission circuit 103 in accordance with anembodiment, configured as mentioned above, will be described below.

First, one of the first and second control signals DQDO and DQD1 isselected using the test signal TM.

As described above, the delay times of the first and second controlsignals DQDO and DQD1 are different. That is to say, the delay time ofthe first control signal DQDO is longer than the delay time of thesecond control signal DQD1.

Therefore, by selecting one of the control signals DQD0 and DQD1 byusing the test signal TM, the first time, that is, a time for openingthe current path of the driver 703, may be controlled, and accordingly,the driving force of the first driving block 203 may be controlled.

For example, it is assumed that the first control signal DQD0 isselected between the first and second control signals DQD0 and DQD1.

In an initial operation, since the output terminal DQ has a low level,the delay 263 of the first driving block 203 generates the first controlsignal DQD0 of a high level by delaying and inverting the level of theoutput terminal DQ.

According to the first control signal DQD0 of the high level, thetransistor 243 opens the current path between the power supply terminalVDDQ and the transistor 213.

The transistor 213 raises the output terminal DQ to a high level inresponse to the data driving signal PU.

As the level of the output terminal DQ rises and becomes equal to orhigher than the threshold voltage of the inverters constituting thedelay 263, the delay 263 transitions the first control signal DQD0 to alow level.

According to the first control signal DQD0 of the low level, thetransistor 243 blocks the current path between the power supply terminalVDDQ and the transistor 213.

Therefore, the first driving block 203 drives the output terminal DQ foronly the first time.

As described above, the transistor 313 of the second driving block 303has a threshold voltage higher than the logic elements of the firstdriving block 203.

Accordingly, the transistor 313 of the second driving block 303 drivesthe output terminal DQ for the second time in response to the datadriving signal PU, at a timing later than the transistor 213 of thefirst driving block 203, that is, after ending of the first time.

The second time may be a time from after ending of the first time tountil the level of the data driving signal PU falls to be lower than thethreshold voltage thereof.

In the data transmission circuit 103 in accordance with an embodiment,after quick driving of the output terminal DQ is performed for the firsttime by using the first driving block 203 which has a relatively fastresponding speed but has a relatively poor leakage currentcharacteristic, the output terminal DQ is retained at the high level forthe second time by using the second driving block 303 which has arelatively slow responding speed but has a relatively excellent leakagecurrent characteristic. As a consequence, it is possible to secure afast driving speed and improve a leakage current characteristic.

Also, by controlling the opening time of the current path, it ispossible to control the driving force of the first driving block 203.

As shown in FIG. 5, a data transmission circuit 104 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a driving block 204 and a compensationblock 304.

The driving block 204 may be configured to drive an output terminal DQin response to data driving signals PU and PD.

The compensation block 304 may be configured to control the amount ofthe leakage current of the output terminal DQ in response to the datadriving signal PU and a result of detecting the level of the outputterminal DQ, and offset an increment in the level of the output terminalDQ.

The driving block 204 and the compensation block 304 may be constitutedby different types of logic elements. The logic elements may include atransistor and an inverter.

The driving block 204 may be constituted by first type logic elements,and the compensation block 304 may be constituted by second type logicelements.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

The driving block 204 may include a plurality of transistors 214 and 224and an inverter 234.

The transistor 214 is electrically coupled between a power supplyterminal VDDQ and the output terminal DQ.

The transistor 224 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 214 and 224.

The inverter 234 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 224.

The compensation block 304 may include a resistor 314 and a plurality oftransistors 324 and 334.

The resistor 314 has one end which is electrically coupled to the outputterminal DQ.

The resistor 314 may have a resistance value equal to or larger than thetermination resistor Rterm of the receiver RX.

The transistor 324 is electrically coupled between the other end of theresistor 314 and the ground terminal VSSQ.

The transistor 334 is electrically coupled between the output terminalDQ and the ground terminal VSSQ in parallel to the transistor 324, andhas the gate to which the one end of the resistor 314 is electricallycoupled.

Operations of the data transmission circuit 104 in accordance with anembodiment, configured as mentioned above, will be described below.

The driving block 204 drives the output terminal DQ in response to thedata driving signal PU.

As described above, the transistor 324 as the second type logic elementof the compensation block 304 has a threshold voltage higher than thefirst type logic elements of the driving block 204.

The transistor 324 of the compensation block 304 operates at a timinglater than the transistor 214 of the driving block 204 in response tothe data driving signal PU, and flows current through the resistor 314.

When high level data is continuously outputted, the voltage level of theoutput terminal DQ, that is, the level of an output voltage (VOH) mayrise to become equal to or higher than a target level.

The transistor 334 allows current of an amount corresponding to thelevel of the gate thereof, that is, changes in the voltages applied toboth ends of the resistor 314, to flow from the output terminal DQ tothe ground terminal VSSQ, and lowers the voltage level of the outputterminal DQ.

The compensation block 304 may retain the voltage level of the outputterminal DQ to the target level, through the above-described operations.

If the data driving signal PU is deactivated, since the transistor 324is turned off, the operation of the compensation block 304 isinterrupted.

In the data transmission circuit 104 in accordance with an embodiment,by allowing leakage current to flow from the output terminal DQ onlywhen the level of the output terminal DQ rises to become equal to orhigher than the target level, by using the compensation block 304, it ispossible to retain the output terminal DQ at the target level.

As shown in FIG. 6, a data transmission circuit 105 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a driving block 205 and a compensationblock 305.

The driving block 205 may be configured to drive an output terminal DQin response to data driving signals PU and PD.

The compensation block 305 may be configured to control the amount ofthe leakage current of the output terminal DQ in response to the datadriving signal PU and a result of detecting the level of the outputterminal DQ, and offset an increment in the level of the output terminalDQ.

The driving block 205 may include a plurality of transistors 215 and 225and an inverter 235.

The transistor 215 is electrically coupled between a power supplyterminal VDDQ and the output terminal DQ.

The transistor 225 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 215 and 225.

The inverter 235 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 225.

The compensation block 305 may include a resistor 315 and a plurality oftransistors 325 and 335.

The transistor 325 is electrically coupled to the power supply terminalVDDQ.

The resistor 315 has one end which is electrically coupled to thetransistor 325 and the other end which is electrically coupled to theground terminal VSSQ.

The resistor 315 may have a resistance value equal to or larger than thetermination resistor Rterm of the receiver RX.

The transistor 335 is electrically coupled between the output terminalDQ and the ground terminal VSSQ, and has the gate to which the one endof the resistor 315 is electrically coupled.

Unlike FIG. 5, the compensation block 305 indirectly detects the levelof the output terminal DQ through a circuit configuration which copiesthe current of the driving block 205, thereby performing a leakagecurrent control independent of the level of the output terminal DQ.

The driving block 205 may be constituted by first type logic elements,and the components of the compensation block 305 excluding thetransistor 325 may be constituted by second type logic elements.

Since the transistor 325 plays the role of copying the current of thedriving block 205, the transistor 325 may be constituted by a first typelogic element similarly to the transistor 215 of the driving block 205.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

Operations of the data transmission circuit 105 in accordance with anembodiment, configured as mentioned above, will be described below.

The driving block 205 drives the output terminal DQ in response to thedata driving signal PU.

As described above, the transistor 325 of the compensation block 305 asthe first type logic element has the same threshold voltage and thus thesame current driving force as the transistor 215 of the driving block205.

The transistor 325 of the compensation block 305 operates at the sametiming as the transistor 215 of the driving block 205 in response to thedata driving signal PU, and flows current through the resistor 315.

When high level data is continuously outputted, the voltage level of theoutput terminal DQ, that is, the level of an output voltage (VOH) mayrise to become equal to or higher than a target level.

The transistor 335 allows current of an amount corresponding to thelevel of the gate thereof, that is, changes in the voltages applied toboth ends of the resistor 315, to flow from the output terminal DQ tothe ground terminal VSSQ, and lowers the voltage level of the outputterminal DQ.

The compensation block 305 may retain the voltage level of the outputterminal DQ to the target level, through the above-described operations.

If the data driving signal PU is deactivated, since the transistor 325is turned off, the operation of the compensation block 305 isinterrupted.

In the data transmission circuit 105 in accordance with an embodiment,by allowing leakage current to flow from the output terminal DQ onlywhen the level of the output terminal DQ rises to become equal to orhigher than the target level, by using the compensation block 305, it ispossible to retain the output terminal DQ at the target level.

As shown in FIG. 7, a data transmission circuit 106 in accordance withan embodiment includes a transmitter TX.

The transmitter TX may be electrically coupled with a receiver RXthrough a transmission line 600.

The transmitter TX may be included in a semiconductor apparatus. Thesemiconductor apparatus may be, for example, a semiconductor memory.

The receiver RX may be included in a controller, such as a CPU and aGPU, which instructs the semiconductor apparatus to input/output data.

The input terminal of the receiver RX may be terminated to the level ofa ground terminal VSSQ through a termination resistor Rterm.

The transmitter TX may include a driving block 206 and a compensationblock 306.

The driving block 206 may be configured to drive an output terminal DQin response to data driving signals PU and PD.

The compensation block 306 may be configured to control the amount ofthe leakage current of the output terminal DQ in response to the datadriving signal PU and a result of detecting the level of the outputterminal DQ, and offset an increment in the level of the output terminalDQ.

The driving block 206 may include a plurality of transistors 216 and 226and an inverter 236.

The transistor 216 is electrically coupled between a power supplyterminal VDDQ and the output terminal DQ.

The transistor 226 is electrically coupled between the output terminalDQ and the ground terminal VSSQ.

The data driving signal PU and the data driving signal PD arerespectively applied to the gates of the transistors 216 and 226.

The inverter 236 inverts the data driving signal PU and applies aresultant signal to the gate of the transistor 226.

The compensation block 306 may include a resistor 316 and a plurality oftransistors 326, 336 and 346.

The transistor 326 is electrically coupled to the power supply terminalVDDQ.

The resistor 316 has one end which is electrically coupled to thetransistor 326.

The transistor 336 is electrically coupled between the other end of theresistor 316 and the ground terminal VSSQ.

The resistor 316 may have a resistance value equal to or larger than thetermination resistor Rterm of the receiver RX.

The transistor 346 is electrically coupled between the output terminalDQ and the ground terminal VSSQ, and has the gate to which the one endof the resistor 316 is electrically coupled.

Unlike FIG. 5, the compensation block 306 detects the level of theoutput terminal DQ through a circuit configuration which copies thecurrent of the driving block 206, thereby performing a leakage currentcontrol independent of the level of the output terminal DQ. Further,unlike FIG. 8, the compensation block 306 copies the current of thedriving block 206 such that a generated voltage level is higher than thelevel of the output terminal DQ.

The driving block 206 may be constituted by first type logic elements,and the components of the compensation block 306 excluding thetransistor 326 may be constituted by second type logic elements.

Since the transistor 326 plays the role of copying the current of thedriving block 206, the transistor 326 may be constituted by a first typelogic element similarly to the transistor 216 of the driving block 206.

The first type logic element is a logic element which has a relativelyfast response timing but has a relatively poor leakage currentcharacteristic, that is, a low threshold voltage, when compared to thesecond type logic element.

The second type logic element is a logic element which has a relativelyslow response timing but has a relatively excellent leakage currentcharacteristic, that is, a high threshold voltage, when compared to thefirst type logic element.

Operations of the data transmission circuit 106 in accordance with anembodiment, configured as mentioned above, will be described below.

The driving block 206 drives the output terminal DQ in response to thedata driving signal PU.

As described above, the transistor 326 of the compensation block 306 asthe first type logic element has the same threshold voltage and thus thesame current driving force as the transistor 216 of the driving block206.

The transistor 326 of the compensation block 306 operates at the sametiming as the transistor 216 of the driving block 206 in response to thedata driving signal PU, and flows current through the resistor 316.

When high level data is continuously outputted, the voltage level of theoutput terminal DQ, that is, the level of an output voltage (VOH) mayrise to become equal to or higher than a target level.

The transistor 346 allows current of an amount corresponding to thelevel of the gate thereof, that is, changes in the voltages applied toboth ends of the resistor 316, to flow from the output terminal DQ tothe ground terminal VSSQ, and lowers the voltage level of the outputterminal DQ.

The compensation block 306 may retain the voltage level of the outputterminal DQ to the target level, through the above-described operations.

If the data driving signal PU is deactivated, since the transistors 326and 336 are turned off, the operation of the compensation block 306 isinterrupted.

In the data transmission circuit 106 in accordance with an embodiment,by allowing leakage current to flow from the output terminal DQ onlywhen the level of the output terminal DQ rises to become equal to orhigher than the target level, by using the compensation block 306, it ispossible to retain the output terminal DQ at the target level.

In the data transmission circuits 100 to 106 in accordance with theembodiments, as can be seen from FIG. 8, an output voltage VOH may bestably retained at a target level through the above-described controlscheme even though high level data is continuously outputted for aplurality of unit intervals nUI.

The data transmission circuits discussed above are particular useful inthe design of memory devices, processors, and computer systems. Forexample, referring to FIG. 9, a block diagram of a system employing thedata transmission circuits in accordance with the embodiments areillustrated and generally designated by a reference numeral 1000. Thesystem 1000 may include one or more processors or central processingunits (“CPUs”) 1100. The CPU 1100 may be used individually or incombination with other CPUs. While the CPU 1100 will be referred toprimarily in the singular, it will be understood by those skilled in theart that a system with any number of physical or logical CPUs may beimplemented. A chipset 1150 may be operably coupled to the CPU 1100. Thechipset 1150 is a communication pathway for signals between the CPU 1100and other components of the system 1000, which may include a memorycontroller 1200, an input/output (“I/O”) bus 1250, and a disk drivecontroller 1300. Depending on the configuration of the system, any oneof a number of different signals may be transmitted through the chipset1150, and those skilled in the art will appreciate that the routing ofthe signals throughout the system 1000 can be readily adjusted withoutchanging the underlying nature of the system.

As stated above, the memory controller 1200 may be operably coupled tothe chipset 1150. The memory controller 1200 may include at least onereceiver RX as discussed above with reference to FIGS. 1-8. Thus, thememory controller 1200 can receive a request provided from the CPU 1100,through the chipset 1150. In alternate embodiments, the memorycontroller 1200 may be integrated into the chipset 1150. The memorycontroller 1200 may be operably coupled to one or more memory devices1350. In an embodiment, the memory devices 1350 may include thetransmitter TX as discussed above with relation to FIGS. 1-9, the memorydevices 1350 may include a plurality of word lines and a plurality ofbit lines for defining a plurality of memory cell. As discussed abovewith regards to FIGS. 1-8 the transmitters TX may be electricallycoupled with receivers RX through transmission lines 600. The memorydevices 1350 may be any one of a number of industry standard memorytypes, including but not limited to, single inline memory modules(“SIMMs”) and dual inline memory modules (“DIMMs”). Further, the memorydevices 1350 may facilitate the safe removal of the external datastorage devices by storing both instructions and data.

The chipset 1150 may also be coupled to the I/O bus 1250. The I/O bus1250 may serve as a communication pathway for signals from the chipset1150 to I/O devices 1410, 1420 and 1430. The I/O devices 1410, 1420 and1430 may include a mouse 1410, a video display 1420, or a keyboard 1430.The I/O bus 1250 may employ any one of a number of communicationsprotocols to communicate with the I/O devices 1410, 1420, and 1430.Further, the I/O bus 1250 may be integrated into the chipset 1150.

The disk drive controller 1450 (i.e., internal disk drive) may also beoperably coupled to the chipset 1150. The disk drive controller 1450 mayserve as the communication pathway between the chipset 1150 and one ormore internal disk drives 1450. The internal disk drive 1450 mayfacilitate disconnection of the external data storage devices by storingboth instructions and data. The disk drive controller 1300 and theinternal disk drives 1450 may communicate with each other or with thechipset 1150 using virtually any type of communication protocol,including all of those mentioned above with regard to the I/O bus 1250.

It is important to note that the system 1000 described above in relationto FIG. 9 is merely one example of a system employing the datatransmission circuit as discussed above with relation to FIGS. 1-8. Inalternate embodiments, such as cellular phones or digital cameras, thecomponents may differ from the embodiments shown in FIG. 9.

While various embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare by way of example only. Accordingly, the data transmission circuitdescribed herein should not be limited based on the describedembodiments. Rather, the data transmission circuit described hereinshould only be limited in light of the claims that follow when taken inconjunction with the above description and accompanying drawings.

What is claimed is:
 1. A data transmission circuit comprising: atransmitter configured to control a current leakage amount of an outputterminal in response to a result of detecting a level of the outputterminal, and thereby offset an increment in the level of the outputterminal; and a receiver electrically coupled with the transmitterthrough a transmission line.
 2. The data transmission circuit accordingto claim 1, wherein the receiver is included in a controller outside asemiconductor apparatus including the transmitter, which instructs thesemiconductor apparatus to input/output data.
 3. The data transmissioncircuit according to claim 1, wherein the receiver has an input terminalwhich is terminated to a level of a ground terminal through atermination resistor.
 4. The data transmission circuit according toclaim 1, wherein the transmitter comprises: a driving block configuredto drive the output terminal in response to a data driving signal; and acompensation block configured to control the current leakage amount ofthe output terminal in response to the data driving signal and theresult of detecting the level of the output terminal, and thereby offsetthe increment in the level of the output terminal.
 5. The datatransmission circuit according to claim 4, wherein the driving blockcomprises logic elements which are designed to have different thresholdvoltages from logic elements of the compensation block.
 6. The datatransmission circuit according to claim 4, wherein the driving block andthe compensation block comprise first type logic elements and secondtype logic elements, respectively, and wherein the first type logicelements are designed to have relatively low threshold voltages whencompared to the second type logic elements.
 7. The data transmissioncircuit according to claim 4, wherein the compensation block comprises:a resistor having one end which is electrically coupled to the outputterminal; a first transistor electrically coupled between the other endof the resistor and a ground terminal; and a second transistorelectrically coupled between the output terminal and the groundterminal, and having a gate to which the one end of the resistor iselectrically coupled.
 8. The data transmission circuit according toclaim 4, wherein the compensation block is configured to control theamount of leakage current of the output terminal in response to a levelof a voltage generated by copying current of the driving block by usingthe data driving signal and the result of detecting the level of theoutput terminal, and offset the increment in the level of the outputterminal.
 9. The data transmission circuit according to claim 8, whereinthe compensation block comprises: a first transistor electricallycoupled to a power supply terminal; a resistor having one end which iselectrically coupled to the first transistor and the other end which iselectrically coupled to the ground terminal; and a second transistorelectrically coupled between the output terminal and the groundterminal, and having a gate to which the one end of the resistor iselectrically coupled.